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2SC3225_06 Datasheet(Hoja de datos) 2 Page - Toshiba Semiconductor

No. de Pieza. 2SC3225_06
Descripción  Silicon NPN Epitaxial Type Switching Applications
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 2 page
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2SC3225
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
10
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
40
V
DC current gain
hFE
VCE = 1 V, IC = 400 mA
500
Collector-emitter saturation voltage
VCE (sat)
IC = 300 mA, IB = 1 mA
0.3
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 300 mA, IB = 1 mA
1.1
V
Transition frequency
fT
VCB = 2 V, IC = 100 mA
220
MHz
Collector output capacitance
Cob
VCB = 10 V, IB = 0, f = 1 MHz
20
pF
Turn-on time
ton
1.0
Storage time
tstg
3.0
Switching time
Fall time
tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
1.2
μs
Marking
20 μs
VCC = 30 V
Output
IB2
IB1
Input
C3225
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)




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