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2SC3307_06 Datasheet(Hoja de datos) 4 Page - Toshiba Semiconductor

No. de Pieza. 2SC3307_06
Descripción  Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 4 page
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2SC3307
2006-11-09
4
Collector-emitter voltage VCE (V)
Safe Operating Area
0.03
3
30
100
300
1000
0.05
0.1
0.3
10
30
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
10 μs*
500 μs*
100 μs*
DC operation
Tc = 25°C
1 ms*
10 ms*
1
3
10
0.5
5
0.01
100 ms*
3
30 ms*
Pulse width tw (s)
rth – tw
0.001
1000
0.01
0.1
100
10
1
10
100
30
0.3
3
1
0.1
0.03
Curves should be applied to the thermally limited
region. (single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)




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