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2SC3307 Datasheet(Hoja de datos) 1 Page - Toshiba Semiconductor

No. de Pieza. 2SC3307
Descripción  Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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2SC3307
2006-11-09
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
• Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max)
(IC = 5 A)
• High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Collector current
Pulse
ICP
15
A
Base current
IB
3
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)




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