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2SC3425 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC3425 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SC3425 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V VCE = 5 V, IC = 0.1 A 20 ― 100 DC current gain hFE VCE = 5 V, IC = 0.5 A 10 ― ― Collector-emitter saturation voltage VCE (sat) IC = 0.1 A, IB = 0.01 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 0.1 A, IB = 0.01 A ― ― 1.0 V Rise time tr ― ― 1.0 Storage time tstg ― ― 2.5 Switching time Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― ― 1.5 μs Marking 20 μs VCC ≈ 200 V Output IB2 IB1 Input C3425 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
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