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2SC3963 Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de Pieza. 2SC3963
Descripción  Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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2SC3963 Datasheet(HTML) 4 Page - Toshiba Semiconductor

   
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2SC3963
2006-11-10
4
Collector current IC (mA)
fT – IC
Ambient temperature Ta (°C)
PC – Ta
Collector-emitter voltage VCE (V)
Safe Operating Area
160
Ta = 25°C
2000
0
0
1500
1000
500
40
80
200
120
10
1
500
VCE = 10 V
2
3
10
30
100
30
50
100
300
Common emitter
Tc = 25°C
5
200
50
5
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
1000
3
3
10
30
50
100
300
500
10
30
50
100
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
5
300
5
0.5 s*
VCEO
max


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