2SJ465 datasheet(2/6 Pages) TOSHIBA

No. de pieza	2SJ465

Descripción Electrónicos	DC−DC Converter, Relay Drive and Motor Drive Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2 / 6 page

2SJ465

2006-11-15

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±6.5 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = −16 V, VGS = 0 V

—

−100

μA

Drain−source breakdown

voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−16

—

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 μA

−0.5

—

−1.1

V

VGS = −2.5 V, ID = −0.5 A

—

0.86

1.0

Drain−source ON resistance

RDS (ON)

VGS = −4 V, ID = −1 A

—

0.54

0.71

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −1 A

0.8

1.7

—

S

Input capacitance

Ciss

—

270

—

Reverse transfer capacitance

Crss

—

25

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

115

—

pF

Rise time

tr

—

200

—

Turn−on time

ton

—

250

—

Fall time

tf

—

200

—

Switching time

Turn−off time

toff

—

500

—

ns

Total gate charge

(Gate−source plus gate−drain)

Qg

—

5

—

Gate−source charge

Qgs

—

3.2

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −16 V, VGS = −5 V, ID = −2 A

—

1.8

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

−2

A

Pulse drain reverse current

(Note 1)

IDRP

—

−6

A

Forward voltage (diode)

VDSF

IDR = −2 A, VGS = 0 V

—

1.7

V

Reverse recovery time

trr

—

130

—

ns

Reverse recovery charge

Qrr

IDR = −2 A, VGS = 0 V

dIDR / dt = 50 A / μs

—

0.13

—

μC

Marking

Z

9

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

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