2SK2613

2006-11-09

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (

π-MOSIII)

2SK2613

Switching Regulator Applications, DC-DC Converter and

Motor Drive Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

1000

V

1000

V

Gate-source voltage

±30

V

DC

(Note 1)

8

Drain current

Pulse

(Note 1)

24

A

Drain power dissipation (Tc

= 25°C)

150

W

Single pulse avalanche energy

(Note 2)

910

mJ

Avalanche current

8

A

Repetitive avalanche energy (Note 3)

15

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C/W

Thermal resistance, channel to ambient

50

°C/W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating: Pulse width limited by max junction temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURSE

JEDEC

―

JEITA

―

TOSHIBA

2−16C1B

Weight: 4.6 g (typ.)

1

3

2