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2SK2679 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2679 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2679 2006-11-02 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V Drain cut−off current IDSS VDS = 400 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 400 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 3 A — 0.84 1.2 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 2.0 4.4 — S Input capacitance Ciss — 720 — Reverse transfer capacitance Crss — 80 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 250 — pF Rise time tr — 15 — Turn−on time ton — 30 — Fall time tf — 25 — Switching time Turn−off time toff — 110 — ns Total gate charge (gate−source plus gate−drain) Qg — 17 — Gate−source charge Qgs — 10 — Gate−drain (“miller”) Charge Qgd VDD ≈ 320 V, VGS = 10 V, ID = 5.5 A — 7 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5.5 A Pulse drain reverse current (Note 1) IDRP — — — 22 A Forward voltage (diode) VDSF IDR = 5.5 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 350 — ns Reverse recovery charge Qrr IDR = 5.5 A, VGS = 0 V dIDR / dt = 100 A / μs — 2.1 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2679 Part No. (or abbreviation code) |
Número de pieza similar - 2SK2679_06 |
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Descripción similar - 2SK2679_06 |
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