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2SK2882 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK2882 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK2882 2006-11-20 5 rth – tw Pulse width tw (s) Drain-source voltage VDS (V) Safe Operating Area Channel temperature (initial) Tch (°C) EAS – Tch Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 0.8 mH ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = V B B · ·L·I 2 1 Ε DD VDSS VDSS 2 AS −15 V 15 V 0 25 80 200 150 75 40 120 160 50 100 125 0.003 100 m 10 m 0.01 1 1 10 0.005 0.3 3 0.03 0.5 0.05 0.1 10 μ 100 μ 1 m Duty = 0.5 0.02 0.2 0.1 0.05 Single pulse 0.01 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous)* ID max (pulsed)* VDSS max 1 ms* 100 μs* DC operation Tc = 25°C 0.1 0.3 0.5 1 3 5 10 30 50 100 3 10 30 100 300 1 |
Número de pieza similar - 2SK2882_06 |
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Descripción similar - 2SK2882_06 |
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