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2SK2989_06 Datasheet(Hoja de datos) 1 Page - Toshiba Semiconductor

No. de Pieza. 2SK2989_06
Descripción  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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2SK2989
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK2989
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 120 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 2.6 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 50 V)
Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
50
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
50
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation
PD
0.9
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (ch−a)
138
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)




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