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2SK3130 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3130 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3130 2006-11-08 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 3 0 0 40 120 160 80 1 2 5 4 ID = 6 A 3 Common source VGS = 10 V Pulse test 1.5 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 10 1 Common source Tc = 25°C Pulse test VGS = 0, −1 V 10 5 3 0.1 1 10 100 10 100 1000 0.3 0.5 3 5 30 50 30 50 300 500 3000 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss 0 1 2 3 5 −80 −40 0 40 80 120 160 4 Common source VDS = 10 V ID = 1 mA Pulse test 0 0 40 80 120 160 200 10 20 30 40 50 0 0 10 40 50 20 4 8 12 16 20 0 100 200 300 400 500 30 Common source ID = 6 A Tc = 25°C Pulse test VDD = 100 V 200 400 VDS VGS |
Número de pieza similar - 2SK3130_06 |
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Descripción similar - 2SK3130_06 |
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