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2SK3130 Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza 2SK3130
Descripción Electrónicos  Silicon N Channel MOS Type
Download  6 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3130 Datasheet(HTML) 4 Page - Toshiba Semiconductor

  2SK3130_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3130_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3130_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SK3130_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SK3130_06 Datasheet HTML 5Page - Toshiba Semiconductor 2SK3130_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SK3130
2006-11-08
4
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Case temperature Tc (°C)
Vth – Tc
Case temperature Tc (°C)
PD – Tc
Total gate charge Qg (nC)
Dynamic input/output characteristics
3
0
0
40
120
160
80
1
2
5
4
ID = 6 A
3
Common source
VGS = 10 V
Pulse test
1.5
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
10
1
Common source
Tc
= 25°C
Pulse test
VGS = 0, −1 V
10
5
3
0.1
1
10
100
10
100
1000
0.3 0.5
3
5
30 50
30
50
300
500
3000
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
0
1
2
3
5
−80
−40
0
40
80
120
160
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
0
40
80
120
160
200
10
20
30
40
50
0
0
10
40
50
20
4
8
12
16
20
0
100
200
300
400
500
30
Common source
ID = 6 A
Tc
= 25°C
Pulse test
VDD = 100 V
200
400
VDS
VGS


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