Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
MP4209 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
MP4209 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page MP4209 2006-10-27 1 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4209 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability • Small package by full molding (SIP 10 pins) • High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V) IDSS = 100 μA (max) (VDS = 100 V) • Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V DC ID 3 Drain current Pulse IDP 12 A Drain power dissipation (1-device operation, Ta = 25°C) PD 2.0 W Drain power dissipation (4device operation, Ta = 25°C) PDT 4.0 W Single pulse avalanche energy (Note 1) EAS 140 mJ Avalanche current IAR 3 A - device operation EAR 0.2 Repetitive avalanche energy (Note 2) 4device operation EART 0.4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1C Weight: 2.1 g (typ.) |
Número de pieza similar - MP4209_07 |
|
Descripción similar - MP4209_07 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |