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MP4209 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza MP4209
Descripción Electrónicos  High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4209 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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MP4209
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4209
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
• 4-V gate drivability
• Small package by full molding (SIP 10 pins)
• High drain power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
IDSS = 100 μA (max) (VDS = 100 V)
• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
ID
3
Drain current
Pulse
IDP
12
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(4device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
140
mJ
Avalanche current
IAR
3
A
- device
operation
EAR
0.2
Repetitive avalanche
energy
(Note 2) 4device
operation
EART
0.4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)


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