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MP4209 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza MP4209
Descripción Electrónicos  High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4209 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MP4209
2006-10-27
2
Array Configuration
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
31.2
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 2 A
0.36
0.45
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
0.28
0.35
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2 A
1.5
3.5
S
Input capacitance
Ciss
280
pF
Reverse transfer capacitance
Crss
50
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V
f = 1 MHz
105
pF
Rise time
tr
20
Turn-on time
ton
50
Fall time
tf
40
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
170
ns
Total gate charge
(gate-source plus gate-drain)
Qg
13.5
nC
Gate-source charge
Qgs
8.5
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V
ID = 3 A
5
nC
10 V
VGS
VDD ≈ 50 V
ID = 2 A
VOUT
0 V
9
7
6
8
10
5
3
2
4
1


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