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MP4210 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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MP4210 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page MP4210 2006-10-27 5 Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Total gate charge Qg (nC) Dynamic Input/Output Characteristics 0 −80 VGS = 4 V Common source 2.5, 1.3 2.5 1.3 ID = 4 A VGS = 10 V −40 0 40 80 120 160 0.3 0.1 0.2 0.4 4 0 −80 Common source VDS = 10 V ID = 1 mA −40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 30 50 100 300 500 1000 3000 0.3 0.5 1 10 30 50 100 3 5 Ciss Coss Crss Common source Tc = 25°C ID = 5 A 0 0 5 10 15 20 20 40 60 80 VDD = 48 V 12 VDD = 48 V VDS VGS 0 4 8 12 16 24 24 12 Common source Tc = 25°C 0.1 0 −0.4 −0.8 −1.6 −2.0 −2.4 −1.2 0.3 0.5 1 3 5 10 20 VGS = 0, −1 V 10 3 1 Drain-source voltage VDS (V) Safe Operating Area 0.1 1 IDP max 100 μs* ID max 100 ms* 3 10 30 100 300 0.3 1 3 10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 30 1 ms* 10 ms* |
Número de pieza similar - MP4210_07 |
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Descripción similar - MP4210_07 |
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