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MP4211 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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MP4211 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page MP4211 2006-10-27 5 Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Total gate charge Qg (nC) Dynamic Input/Output Characteristics Case temperature Tc (°C) Vth – Tc 0 −80 ID = −5, −2.5, −1.2 A −2.5 −1.2 VGS = −4 V −40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 Common source ID = −5 A VGS = −10 V Common source Tc = 25°C −0.1 0 0.4 0.8 1.2 1.6 2.0 −0.3 −0.5 −1 −3 −5 −10 −30 VGS = 0, 1 V −10 −3 −1 0 −80 Common source VDS = −10 V ID = −1 mA −40 0 40 80 120 160 −0.4 −0.8 −1.2 −1.6 −2.0 0 0 −10 −20 −30 −40 −50 8 16 24 32 40 0 −4 −8 −12 −16 −20 VDD = −48 V −12 −24 VDS VGS Common source ID = −5 A Tc = 25°C Drain-source voltage VDS (V) Safe Operating Area −0.1 −1 IDP max 100 μs* ID max 100 ms* −3 −10 −30 −100 −300 −0.3 −1 −3 −10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −30 1 ms* 10 ms* 30 −0.1 −0.3 −1 −3 −10 −30 −100 50 100 300 500 1000 3000 5000 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss 10000 |
Número de pieza similar - MP4211_07 |
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Descripción similar - MP4211_07 |
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