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MP4211 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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MP4211 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page MP4211 2006-10-27 1 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne) MP4211 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability • Small package by full molding (SIP 10 pin) • High drain power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) • Low drain-source ON resistance: RDS (ON) = 0.16 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.0 S (typ.) • Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V) IDSS = −100 μA (max) (VDS = −60 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −60 V Drain-gate voltage (RGS = 20 kΩ) VDGR −60 V Gate-source voltage VGSS ±20 V DC ID −5 Drain current Pulse IDP −20 A Drain power dissipation (1-device operation, Ta = 25°C) PD 2.0 W Drain power dissipation (- device operation, Ta = 25°C) PDT 4.0 W Single pulse avalanche energy (Note 1) EAS 273 mJ Avalanche current IAR −5 A 1-device operation EAR 0.2 Repetitive avalanche energy (Note 2) 4-device operation EART 0.4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Condition for avalanche energy (single pulse) measurement VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1C Weight: 2.1 g (typ.) |
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