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MP4411 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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MP4411 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page MP4411 2006-10-27 5 Vth – Tc Case temperature Tc (°C) RDS (ON) – Tc Case temperature Tc (°C) Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) Safe Operating Area Total gate charge Qg (nC) Dynamic Input/Output Characteristics 10 0.3 Ciss Coss Crss 0.1 0.5 1 3 5 10 30 50 100 30 50 100 300 1000 500 3000 Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source Tc = 25°C 0.1 0 1 3 VGS = 10 V 0 −0.5 −1.0 −1.5 −2.0 0.3 0.5 1 3 5 10 0 −80 Common source VDS = 10 V ID = 1 mA −40 0 40 80 120 160 1 2 4 3 0.1 1 IDP max 100 μs* 10 ms* 1 ms* ID max 100 ms* 3 10 30 100 300 0.3 1 3 10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0 −80 0.8, 1.5 1.5 3 VGS = 4 V −40 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 Common source ID = 3 A VGS = 10 V 0.8 0 0 20 40 60 80 100 4 8 12 16 20 0 4 8 12 16 20 VDS VGS Common source VDD = 80 V ID = 3 A Tc = 25°C |
Número de pieza similar - MP4411_07 |
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Descripción similar - MP4411_07 |
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