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MP4411 Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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MP4411 Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page MP4411 2006-10-27 6 rth – tw Pulse width tw (s) Ambient temperature Ta (°C) PDT – Ta Total power dissipation PDT (W) ΔTch – PDT Channel temperature Tch (°C) EAS – TcH -No heat sink/Attached on a circuit board- (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board 100 0.001 0.01 0.1 1 10 1000 0.5 1 3 10 30 100 300 Curves should be applied in thermal limited area. (sSngle nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) (3) (1) (2) 0 8 40 2 4 6 80 120 160 200 0 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board Circuit board (4) (3) (2) (1) 2 4 6 8 0 160 40 80 120 10 0 Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board (1) (2) (3) (4) 0 25 40 80 120 160 200 50 75 100 125 150 TEST CIRCUIT TEST WAVE FORM IAR BVDSS VDD VDS Peak IAR = 3 A, RG = 25 Ω VDD = 50 V, L = 20 mH −15 V 15 V ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = DD VDSS VDSS 2 AS V B B · ·L·I 2 1 Ε |
Número de pieza similar - MP4411_07 |
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Descripción similar - MP4411_07 |
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