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MP4412 Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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MP4412 Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 8 page MP4412 2006-10-27 6 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Case temperature Tc (°C) Vth – Tc Drain-source voltage VDS (V) Capacitance – VDS Total gate charge Qg (nC) Dynamic Input/Output Characteristics Drain-source voltage VDS (V) Safe Operating Area Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 0.3 0.5 1 3 5 10 30 50 100 30 50 100 300 500 1000 3000 Ciss Coss Crss 0 0 0 Common source ID = 5 A Tc = 25°C 8 16 24 32 20 40 60 80 4 8 12 16 VDD = 80 V 20 40 VDS VGS 0 −80 Common source VDS = 10 V ID = 1 mA −40 0 40 80 120 160 1 2 3 4 5 0.1 1 100 μs* 10 ms* 1 ms* ID max 100 ms* 3 10 30 100 300 0.3 1 3 10 30 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IDP max 0 −80 −40 0 40 80 120 160 0.1 0.2 0.3 0.4 0.5 VGS = 4 V 10 V 1.3 ID = 5 A 1.3 2.5 2.5 ID = 5 A Common source Common source Tc = 25°C 0.1 0 −0.4 −0.8 −1.2 −1.6 −2.0 0.3 0.5 1 3 5 10 30 VGS = 0, −1 V 10 3 1 |
Número de pieza similar - MP4412_07 |
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Descripción similar - MP4412_07 |
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