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MP4412 Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza MP4412
Descripción Electrónicos  High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4412 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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MP4412
2006-10-27
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 2.5 A
0.22
0.30
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.17
0.23
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
S
Input capacitance
Ciss
500
pF
Reverse transfer capacitance
Crss
80
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V
f = 1 MHz
190
pF
Rise time
tr
17
Turn-on time
ton
25
Fall time
tf
50
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
195
μs
Total gate charge
(gate-source plus gate-drain)
Qg
22
nC
Gate-source charge
Qgs
15
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V
ID = 5 A
7
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
5
A
Pulse drain reverse current
IDRP
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
160
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/μs
0.28
μC
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
5
A
Reverse current
IR
VR = 100 A
0.4
μA
Reverse voltage
VR
IR = 100 μA
100
V
Forward voltage
VF
IF = 2 A
2.3
V
10 V
VGS
VDD ≈ 50 V
ID = 2.5 A
VOUT
0 V


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