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MP4412 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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MP4412 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page MP4412 2006-10-27 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ― ― 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ― ― V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 ― 2.0 V VGS = 4 V, ID = 2.5 A ― 0.22 0.30 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A ― 0.17 0.23 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 2.0 4.5 ― S Input capacitance Ciss ― 500 ― pF Reverse transfer capacitance Crss ― 80 ― pF Output capacitance Coss VDS = 10 V, VGS = 0 V f = 1 MHz ― 190 ― pF Rise time tr ― 17 ― Turn-on time ton ― 25 ― Fall time tf ― 50 ― Switching time Turn-off time toff VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs ― 195 ― μs Total gate charge (gate-source plus gate-drain) Qg ― 22 ― nC Gate-source charge Qgs ― 15 ― nC Gate-drain (“miller”) charge Qgd VDD ≈ 80 V, VGS = 10 V ID = 5 A ― 7 ― nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current IDR ― ― ― 5 A Pulse drain reverse current IDRP ― ― ― 20 A Diode forward voltage VDSF IDR = 5 A, VGS = 0 V ― ― −1.7 V Reverse recovery time trr ― 160 ― ns Reverse recovery charge Qrr IDR = 5 A, VGS = 0 V dIDR/dt = 50 A/μs ― 0.28 ― μC Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 5 A Reverse current IR VR = 100 A ― ― 0.4 μA Reverse voltage VR IR = 100 μA 100 ― ― V Forward voltage VF IF = 2 A ― ― 2.3 V 10 V VGS VDD ≈ 50 V ID = 2.5 A VOUT 0 V |
Número de pieza similar - MP4412_07 |
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Descripción similar - MP4412_07 |
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