TC7SZ00F/FU

2007-11-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ00F,TC7SZ00FU

2 Input NAND Gate

Features

• 5.5-V tolerant inputs

• 5.5-V power down protection outputs

• Matches the performance of TC74LCX series when operated at

Marking

Characteristics

Symbol

Rating

Unit

Power supply voltage

−0.5~6

V

DC input voltage

−0.5~6

V

DC output voltage

−0.5~6

V

Input diode current

−20

mA

Output diode current

−20

mA

DC output current

±50

mA

±50

mA

Power dissipation

200

mW

Storage temperature

−65~150

°C

Lead temperature (10s)

260

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

TC7SZ00F

TC7SZ00FU

Weight

SSOP5-P-0.95

: 0.016 g (typ.)

SSOP5-P-0.65A

: 0.006 g (typ.)

Type name

J 1

IN B

IN A

GND

1

2

3

5

4

OUT Y