TC7WG08FC datasheet(1/6 Pages) TOSHIBA

No. de pieza	TC7WG08FC

Descripción Electrónicos	CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input AND Gate

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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TC7WG08FC

2007-11-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG08FC

Dual 2-Input AND Gate

Features

• High-level output current:

IOH/IOL = ±8 mA (min)

at VCC = 3 V

• High-speed operation: tpd = 2.5 ns (typ.)

at VCC = 3.3 V,15pF

• Operating voltage range: VCC = 0.9~3.6 V

• 5.5-V tolerant inputs

• 3.6-V power down protection outputs

Marking

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Value

Unit

Power supply voltage

VCC

−0.5~4.6

V

DC input voltage

VIN

−0.5~7.0

V

−0.5~4.6 (Note 1)

DC output voltage

VOUT

−0.5~VCC + 0.5 (Note 2)

V

Input diode current

IIK

−20

mA

Output diode current

IOK

−20

(Note 3)

mA

DC output current

IOUT

±25

mA

DC VCC/GND current

ICC

±50

mA

Power dissipation

PD

150

(Note 4) mW

Storage temperature

Tstg

−65~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: VCC = 0V

Note 2: High or Low State.

IOUT absolute maximum rating must be observed.

Note 3: VOUT < GND

Note 4: Mounted on an FR4 board.

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 11.56 mm

2

)

Pin Assignment (top view)

TC7WG08FC

CSON8-P-0.4

Weight: 0.002 g (typ.)

G08

Product name

1

2

3

4

8

7

6

5

1A

1B

2Y

GND

1Y

2B

2A

Vcc

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