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TC7WG17FC Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza TC7WG17FC
Descripción Electrónicos  CMOS Digital Integrated Circuit Silicon Monolithic Triple Schmitt Buffer
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7WG17FC Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TC7WG17FC
2007-11-01
3
Electrical Characteristics
DC Electrical Characteristics
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
⎯
⎯
0.73
⎯
0.80
1.1
⎯
⎯
0.86
⎯
0.93
1.4
⎯
⎯
1.07
⎯
1.12
1.65
⎯
⎯
1.23
⎯
1.25
2.3
⎯
⎯
1.66
⎯
1.68
High level
VP
⎯
3.0
⎯
⎯
2.14
⎯
2.15
0.9
0.18
⎯
⎯
0.07
⎯
1.1
0.26
⎯
⎯
0.18
⎯
1.4
0.36
⎯
⎯
0.31
⎯
1.65
0.45
⎯
⎯
0.41
⎯
2.3
0.69
⎯
⎯
0.64
⎯
Threshold voltage
Low level
VN
⎯
3.0
0.96
⎯
⎯
0.91
⎯
V
0.9
0.20
⎯
0.38
0.15
0.53
1.1
0.25
⎯
0.41
0.21
0.53
1.4
0.35
⎯
0.48
0.34
0.57
1.65
0.42
⎯
0.56
0.40
0.60
2.3
0.60
⎯
0.74
0.61
0.76
Hysteresis voltage
VH
⎯
3.0
0.79
⎯
0.93
0.80
0.94
V
IOH =−0.02 mA
0.9
0.75
⎯
⎯
0.75
⎯
IOH = −0.3 mA 1.1~1.3
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −1.7 mA 1.4~1.6
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −3.0 mA
1.65~
1.95
VCC
-0.45
⎯
⎯
VCC
-0.45
⎯
IOH = −4.0 mA 2.3~2.7
2.0
⎯
⎯
2.0
⎯
High level
VOH
VIN = VIH
IOH = −8.0 mA 3.0~3.6
2.48
⎯
⎯
2.48
⎯
IOL = 0.02 mA
0.9
⎯
⎯
0.1
⎯
0.1
IOL = 0.3 mA
1.1~1.3
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 1.7 mA
1.4~1.6
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 3.0 mA
1.65~
1.95
⎯
⎯
0.45
⎯
0.45
IOL = 4.0 mA
2.3~2.7
⎯
⎯
0.4
⎯
0.4
Output voltage
Low level
VOL
VIN = VIL
IOL = 8.0 mA
3.0~3.6
⎯
⎯
0.4
⎯
0.4
V
Input leakage current
IIN
VIN = 0~5.5V
0~3.6
⎯
⎯
±0.1
⎯
±1.0
μA
Power off leakage current
IOFF
VIN = 0~5.5V
VOUT = 0~3.6V
0
⎯
⎯
1.0
⎯
10.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
3.6
⎯
⎯
1.0
⎯
10.0
μA


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