TC7SZ38FU datasheet(4/7 Pages) TOSHIBA

No. de pieza	TC7SZ38FU

Descripción Electrónicos	2-Input NAND Gate(Open Drain Output)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TC7SZ38F/FU

2007-11-01

4

AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Test Condition

VCC (V)

Min

Typ.

Max

Min

Max

Unit

1.65

1.5

6.5

12.7

1.5

13.2

1.8

1.5

5.4

10.5

1.5

11.0

2.5

± 0.2

0.8

3.5

7.0

0.8

7.5

3.3

± 0.3

0.8

2.8

5.0

0.8

5.2

tpZL

CL = 50 pF,

RL = 500 Ω

5.0

± 0.5

0.5

2.2

4.3

0.5

4.5

ns

1.65

1.5

5.5

12.7

1.5

13.2

1.8

1.5

4.6

10.5

1.5

11.0

2.5

± 0.2

0.8

3.0

7.0

0.8

7.5

3.3

± 0.3

0.8

2.1

5.0

0.8

5.2

Propagation delay time

tpLZ

CL = 50 pF,

RL = 500 Ω

5.0

± 0.5

0.5

1.3

4.3

0.5

4.5

ns

Input capacitance

CIN

⎯

0~5.5

⎯

4

⎯

pF

Output capacitance

COUT

⎯

5.5

⎯

3

⎯

pF

3.3

⎯

6.7

⎯

Power dissipation capacitance

CPD

(Note 4)

5.5

⎯

13

⎯

pF

Note 4: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

ICC (opr) = CPD･VCC･fIN + ICC

AC Characteristics Measurement Circuit

Characteristics

Switch

tpLZ, tpZL

VCC × 2

Measure

VCC × 2

Output

Switch

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TC7SZ38FU Datasheet(PDF) 4 Page - Toshiba Semiconductor

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