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1SV314 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SV314 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV314 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 VCO for UHF Band Radio High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) Low Series Resistance : rs = 0.35 Ω (Typ.) Useful for Small Size Tuner Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Reverse Voltage VR IR = 1μA 10 — — V Reverse Current IR VR = 10 V — — 3 nA Capacitance C0.5 V VR = 0.5 V, f = 1 MHz 7.3 — 8.4 pF Capacitance C2.5 V VR = 2.5 V, f = 1 MHz 2.75 — 3.4 pF Capacitance Ratio C0.5 V / C2.5 V — 2.4 2.5 — — Series Resistance rs VR = 1 V, f = 470 MHz — 0.35 0.45 Ω Marking Unit: mm JEDEC — EIAJ — TOSHIBA 1−1G1A Weight:0.0014g |
Número de pieza similar - 1SV314_07 |
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Descripción similar - 1SV314_07 |
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