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2SA1359 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1359 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1359 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −40 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −40 ― ― V hFE (1) (Note) VCE = −2 V, IC = −0.5 A 80 ― 240 DC current gain hFE (2) VCE = −2 V, IC = −2.5 A 25 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −0.2 A ― ― −0.8 V Base-emitter voltage VBE VCE = −2 V, IC = −0.5 A ― ― −1.0 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 100 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 35 ― pF Note: hFE (1) classification O: 80 to 160, Y: 120 to 240 Marking A1359 Part No. (or abbreviation code) Characteristics indicator Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
Número de pieza similar - 2SA1359_07 |
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Descripción similar - 2SA1359_07 |
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