TLP531,TLP532

2007-10-01

2

Characteristic

Symbol

Rating

Unit

Forward current

70

mA

Forward current derating (Ta ≥ 50°C)

0.93

mA / °C

Peak forward current (100 μs pulse, 100pps)

1

A

Reverse voltage

5

V

Junction temperature

125

°C

Collector

−emitter voltage

55

V

Collector

−base voltage (TLP531)

80

V

Emitter

−collector voltage

7

V

Emitter

−base voltage (TLP531)

7

V

Collector current

50

mA

Power dissipation

150

mW

Power dissipation derating (Ta ≥ 25°C)

−1.5

mW / °C

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−55~100

°C

Lead soldering temperature (10s)

260

°C

Total package power dissipation

250

mW

Total package power dissipation derating (Ta ≥ 25°C)

−2.5

mW / °C

Isolation voltage (AC, 1min., R.H.≤ 60%)

2500

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Recommends Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

―

5

24

V

Forward current

―

16

25

mA

Collector current

―

1

10

mA

Operating temperature

−25

―

85

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.