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TLP350 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP350 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP350 2007-10-01 3 Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified) Characteristic Symbol Test Circuit Test Conditions Min Typ.* Max Unit Forward voltage VF ⎯ IF = 10 mA, Ta = 25°C ⎯ 1.6 1.8 V Temperature coefficient of forward voltage ∆VF/∆Ta ⎯ IF = 10 mA ⎯ −2.0 ⎯ mV/°C Input reverse current IR ⎯ VR = 5 V, Ta = 25°C ⎯ ⎯ 10 μA Input capacitance CT ⎯ V = 0 , f = 1 MHz,Ta = 25°C ⎯ 45 250 pF VCC = 30 V,IF = 5 mA V8-6 = -3.5 V ⎯ −1.6 -1.0 “H” Level IOPH 1 VCC = 15 V,IF = 5 mA V8-6 = -7.0 V ⎯ ⎯ -2.0 VCC = 30 V,IF = 0 mA V6-5 = 2.5V 1.0 1.6 ⎯ Output current (Note 9) “L” Level IOPL 2 VCC = 15 V,IF = 0 mA V6-5 = 7.0V 2.0 ⎯ ⎯ A “H” Level VOH 3 IF = 5 mA 11 13.7 ⎯ Output voltage “L” Level VOL 4 VCC 1= +15 V VEE 1= -15 V RL = 200 Ω VF = 0.8 V ⎯ -14.9 -12.5 V “H” Level ICCH 5 IF = 10 mA ⎯ 1.3 2.0 Supply current “L” Level ICCL 6 VCC = 30 V VO open IF = 0 mA ⎯ 1.3 2.0 mA Threshold input current L → H IFLH ⎯ VCC = 15V , VO > 1V , Io = 0mA ⎯ 1.8 5 mA Threshold input voltage H → L VFHL ⎯ VCC = 15V , VO < 1V , Io = 0mA 0.8 ⎯ ⎯ V Supply voltage VCC ⎯ ⎯ 15 ⎯ 30 V VUVLO+ ⎯ 11.0 12.5 13.5 V UVLO threshhold VUVLO- ⎯ VO > 2.5 V , IF = 5 mA 9.5 11.0 12.0 V UVLO hysteresis UVLOHYS ― ― ― 1.5 ― V *: All typical values are at Ta = 25°C Note 9: Duration of IO : ≤ 50 μs(1PULSE) Note 10: This product is more sensitive to static electricity (ESD) than the conventional product because of its minimal power consumption design. General static electricity precautions are necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min. Typ. Max. Unit Capacitance input to output CS V = 0,f = 1MHz (Note5) ⎯ 1.0 ⎯ pF Isolation resistance RS VS = 500 V, Ta = 25°C, R.H. ≤ 60% (Note5) 1×10 12 10 14 ― Ω AC,1 minute 3750 ― ― AC,1 second,in oil ― 10000 ― Vrms Isolation voltage BVS DC,1 minute,in oil ― 10000 ― Vdc |
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