SI2312DS_05 datasheet(2/5 Pages) VISHAY

No. de pieza	SI2312DS

Descripción Electrónicos	N-Channel 20 -V (D-S) MOSFET

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Si2312DS

Vishay Siliconix

www.vishay.com

2

Document Number: 71338

S-50574—Rev. E, 04-Apr-05

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.45

0.65

0.85

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 70_C

75

mA

On-State Drain Currenta

ID(on)

VDS w 10 V, VGS = 4.5 V

15

A

VGS = 4.5 V, ID = 5.0 A

0.027

0.033

Drain-Source On-Resistancea

rDS(on)

VGS = 2.5 V, ID = 4.5 A

0.033

0.040

W

SO

DS(on)

VGS = 1.8 V, ID = 4.0 A

0.042

0.051

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 5.0 A

40

S

Diode Forward Voltage

VSD

IS = 1.0 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

11.2

14.0

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 5.0 A

1.4

nC

Gate-Drain Charge

Qgd

DS

GS

D

2.2

Switching

Turn-On Delay Time

td(on)

15

25

Rise Time

tr

VDD = 10 V, RL = 10 W

40

60

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1.0 A, VGEN = 4.5 V, Rg = 6 W

48

70

ns

Fall-Time

tf

g

31

45

Source-Drain Reverse Recovery Time

trr

IF = 1.0 A, di/dt = 100 A/ms

13

25

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

0

3

6

9

12

15

01

23

4

VGS = 4.5 thru 2.0 V

TC = 125_C

−55_C

1.5 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1.0 V

0.5 V

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