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TA48LS00F Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de Pieza. TA48LS00F
Descripción  300 mA Output Current, Variable Output Voltage and Low Dropout Voltage Regulator with ON/OFF Control Switch
Descarga  9 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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TA48LS00F Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TA48LS00F
2007-06-22
3
Absolute Maximum Rating (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Input voltage
VIN
14
V
EN Input voltage
VEN
14
V
Output current
IOUT
300
mA
Operating junction temperature
Tj(opr)
-40~150
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~150
°C
Power dissipation(Note 3) Ta
= 25°C
PD
1.2
W
Note 1: Do not apply current and voltage (including reverse polarity) to any pin that is not specified.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
hermal resistance, junction to ambient
Rth (j−a)
102
/ W
Operating Input Voltage Range
Characteristic
Symbol
Min
Typ.
Max
Unit
Inp u t v o lt age
VIN
2.5(Note 4)
14.0
V
Note 4: This is the voltage at which the IC begins operating. VD must be considered when determining the best
input voltage for the application.
Output Voltage Range
Characteristic
Symbol
Min
Typ.
Max
Unit
Output voltage
VOUT
1.5
5.0
V
Protection Function (Reference)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Thermal shutdown
TSD
150
170
°C
Thermal shutdown hysteresis width
TSD(hys)
VIN = 4.3 V
15
°C
VIN = 5.3 V, Tj = 25°C
300
500
Peak circuit current
IPEAK
VIN = 8.3 V, Tj = 25°C
300
500
mA
VIN = 5.3 V, Tj = 25°C
300
Short circuit current
ISC
VIN = 16V , Tj = 25°C
300
mA
Note 5: Ensure that the devices operate within the limits of the maximum rating when in actual use.
Material :FR-4
25.4
× 25.4 × 1.6
Unit : (mm)
Cu base thickness : 35
μm
Note 3: Glass epoxy board


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