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TA4800AF Datasheet(PDF) 5 Page - Toshiba Semiconductor

No. de Pieza. TA4800AF
Descripción  1A Output Current Low Dropout Voltage Regulator
Descarga  9 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA4800AF Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TA4800AF
2006-11-06
5
Electrical Characteristics Common to All Products
• Tj = 25°C in the measurement conditions of each item is the standard condition when a pulse test is carried
out, and any drift in the electrical characteristic due to a rise in the junction temperature of the chip may be
disregarded.
Standard Application Circuit
• Be sure to connect a capacitor near the input terminal and output terminal between both terminals and GND.
The use of a monolithic ceramic capacitor (B Characteristic or X7R) of low ESR (equivalent series resistance)
is recommended. The IC may oscillate due to external conditions (output current, temperature, or the type of
the capacitor used). The type of capacitor required must be determined by the actual application circuit in
which the IC is used.
Setting Output Voltage
• The output voltage is determined by the equation shown below. When you control the output voltage with R1,
a recommended value to use for R2 is 5 k
Ω. R1 and R2must be placed as close as possible to each other, and
the board trace to the ADJ terminal must be kept as short as possible.
)
R2
R1
+
1
(
×
REF
V
=
OUT
V
The notice in case of application
• The IC might be destroyed if a voltage greater than the input terminal voltage is applied to the output
terminal, or if the input terminal is connected to GND during operation. To prevent such an occurrence,
connect a diode as in the following diagram.
• There is a possibility that internal parasitic devices may be generated when momentary transients cause a
terminal’s potential to fall below that of the GND terminal. In such case, that the device could be destroyed.
The voltage of each terminal and any state must therefore never fall below the GND potential.
CIN
0.33
μF
IN
OUT
ADJ
GND
Load
COUT
3.3
μF
TA4800AF
R1
R2
CIN
0.33
μF
IN
OUT
ADJ
GND
Load
COUT
3.3
μF
TA4800AF
R1
R2


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