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STD11NM60N-1 Datasheet(Hoja de datos) 4 Page - STMicroelectronics

No. de Pieza. STD11NM60N-1
Descripción  N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh™ Power MOSFET
Descarga  18 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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 4 page
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Electrical characteristics
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
V
dv/dt(1)
1.
Characteristic value at turn off on inductive load
Drain-source voltage slope
VDD = 400 V,ID = 5 A,
VGS =10 V
45
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS=Max rating,Tc=125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5 A
0.37
0.45
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID= 5 A
7.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =50V, f=1MHz, VGS=0
850
44
5
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0 V to 480 V
130
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
3.7
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480 V, ID = 10 A
VGS =10 V
(see Figure 19)
31
4.2
15.9
nC
nC
nC




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