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TSM4392 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM4392
Descripción Electrónicos  30V N-Channel MOSFET
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM4392 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TSM4392
30V N-Channel MOSFET
2/4
Version: Preliminary
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.8
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IDSS
--
--
1.0
µA
On-State Drain Current
a
VDS ≥ 5V, VGS = 10V
ID(ON)
30
--
--
A
VGS = 10V, ID = 12.5A
--
9
11.5
Drain-Source On-State Resistance
a
VGS = 4.5V, ID = 10A
RDS(ON)
--
13
16.5
mΩ
Forward Transconductance
a
VDS = 15V, ID = 12.5A
gfs
--
40
--
S
Diode Forward Voltage
IS = 2.7A, VGS = 0V
VSD
--
0.85
1.3
V
Dynamic
b
Total Gate Charge
Qg
--
26
--
Gate-Source Charge
Qgs
--
6
--
Gate-Drain Charge
VDS = 15V, ID = 12.5A,
VGS = 10V
Qgd
--
5
--
nC
Input Capacitance
Ciss
--
2134
--
Output Capacitance
Coss
--
343
--
Reverse Transfer Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Crss
--
134
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
17
--
Turn-On Rise Time
tr
--
3.5
--
Turn-Off Delay Time
td(off)
--
40
--
Turn-Off Fall Time
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
6
--
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.


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