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STP20NM50FD Datasheet(PDF) 2 Page - STMicroelectronics |
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STP20NM50FD Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page STP20NM50FD - STF20NM50D - STB20NM50FD 2/11 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Value Unit STP20NM50FD STB20NM50FD STF20NM50D VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain-gate Voltage (RGS =20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 20 (*) A ID Drain Current (continuous) at TC = 100°C 14 14 (*) A IDM ( ) Drain Current (pulsed) 80 80 (*) A PTOT Total Dissipation at TC =25°C 192 45 W Derating Factor 1.2 0.36 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220 / D2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj =25°C, ID =IAR,VDD =35 V) 700 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC =125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ±30V ±100 nA VGS(th Gate Threshold Voltage VDS =VGS,ID = 250 µA 34 5V RDS(on) Static Drain-source On Resistance VGS =10V,ID = 10A 0.22 0.25 Ω |
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