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S29GL064A30BAIR10 Datasheet(PDF) 85 Page - SPANSION

No. de pieza S29GL064A30BAIR10
Descripción Electrónicos  64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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S29GL064A30BAIR10 Datasheet(HTML) 85 Page - SPANSION

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September 10, 2007 S29GL-A_00_A11
S29GL-A
85
Data
She e t
Notes
1. Not 100% tested.
2. See Erase And Programming Performance on page 87 for more information
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 16.13 on page 86
Table 16.11 Alternate CE# Controlled Erase and Program Operations-S29GL016A
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
25
ns
tWHWH1
tWHWH1
Write Buffer Program Operation (Notes 2, 3)Typ
240
µs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tRH
RESET# High Time Before Write
Min
50
ns
tPOLL
Program Valid before Status Polling (Note 4)
Max
4
µs


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