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S29GL064A30BAIR23 Datasheet(PDF) 77 Page - SPANSION |
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S29GL064A30BAIR23 Datasheet(HTML) 77 Page - SPANSION |
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77 / 95 page  September 10, 2007 S29GL-A_00_A11 S29GL-A 77 Data She e t Notes 1. Not 100% tested. 2. See Erase And Programming Performance on page 87 for more information 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 16.5 on page 79. Table 16.6 Erase and Program Operations-S29GL032A Only Parameter Description Speed Options Unit JEDEC Std. 90 10 11 tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 ns tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 35 ns tWHDX tDH Data Hold Time Min 0 ns tCEPH CE# High during toggle bit polling Min 20 ns tOEPH OE# High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Write Buffer Program Operation (Note 2, 3) Typ 240 µs Single Word Program Operation (Note 2) Typ 60 Accelerated Single Word Program Operation (Note 2) Typ 54 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs tBUSY WE# High to RY/BY# Low Min 90 100 110 ns tPOLL Program Valid before Status Polling Max 4 µs |
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