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FGB3040CS Datasheet(Hoja de datos) 3 Page - Fairchild Semiconductor

No. de Pieza. FGB3040CS
Descripción  EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
Descarga  9 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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FGB3040CS Rev. A
www.fairchildsemi.com
3
Typical Performance Curves
Figure 1. Emitter Sense Voltage vs. Emitter Sense
Resistance
Figure 2. Emitter Sense Voltage vs. Collector to
Emitter Current
Figure 3. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 4. Self Clamped Inductive Switching
Current vs. Inductance
Figure 5. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 6. Collector to Emitter On-State Voltage
vs. Junction Temperature
1
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
ICE = 18A
ICE = 15A
ICE = 10A
ICE = 8A
ICE = 5A
ICE = 3A
ICE = 1A
ICE = 0.5A
VGE = 5V, TJ = 25
oC
RSENSE, Emitter Sense Resistance (ohms)
0
2
4
6
8
10121416
1820
0
100
200
300
400
ICE, COLLECTOR TO EMITTER CURRENT (A)
V
GE = 5V, RSENSE = 5 ohms, TJ = 25
oC
0
25
50
75
100
125
150
175
200
0
5
10
15
20
25
30
35
SCIS Curves valid for V
clamp Voltages of <430V
T
J = 150
oC
T
J = 25
oC
tCLP, TIME IN CLAMP (μS)
R
G = 1KΩ, VGE = 5V, VCE = 14V
02
4
6
8
10
0
5
10
15
20
25
30
35
SCIS Curves valid for V
clamp Voltages of <430V
T
J = 150
oC
T
J = 25
oC
L, INDUCTANCE (mHy)
R
G = 1KΩ, VGE = 5V, VCE = 14V
-75 -50 -25
0
25
50
75 100 125 150 175
1.12
1.16
1.20
1.24
1.28
1.32
1.36
I
CE = 6A
V
GE = 8V
V
GE = 5V
V
GE = 4.5V
V
GE = 4.0V
V
GE = 3.7V
TJ, JUNCTION TEMPERTURE (
oC)
-75 -50 -25
0
25
50
75 100 125 150 175
1.2
1.3
1.4
1.5
1.6
1.7
1.8
I
CE = 10A
V
GE = 8V
V
GE = 5V
V
GE = 4.5V
V
GE = 4.0V
V
GE = 3.7V
TJ, JUNCTION TEMPERTURE (
oC)




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