BD439 datasheet(2/4 Pages) STMICROELECTRONICS

No. de pieza	BD439

Descripción Electrónicos	COMPLEMENTARY SILICON POWER TRANSISTORS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.5

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

for BD439/440

VCB = 60 V

for BD441/442

VCB = 80 V

100

µA

ICES

Collector Cut-off

Current (VBE = 0)

for BD439/440

VCB = 60 V

for BD441/442

VCB = 80 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

for DB439/440

for BD441/442

60

80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.2 A

0.8

V

VBE

∗

Base-Emitter Voltage

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 1 V

0.58

1.5

V

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

for BD439/440

for BD441/442

IC = 500 mA

VCE = 1 V

for BD439/440

for BD441/442

IC = 2 A

VCE = 1 V

for BD439/440

for BD441/442

20

15

40

25

15

130

140

hFE1

/hFE2∗ Matched Pair

IC = 500 mA

VCE = 1 V

1.4

fT

Transition frequency

IC = 250 mA

VCE = 1 V

3

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BD439/BD440/BD441/BD442

2/4

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