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BUT32V Datasheet(PDF) 2 Page - STMicroelectronics |
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BUT32V Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page  THERMAL DATA Rthj-ca se Rthc-h Thermal Resistance Ju nction- case Max Thermal Resistance Case-heatsin k With Conductive Grease Applied Max 0.5 0.05 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collecto r Cu t-of f Current (RBE =5 Ω) VCE =VCEV VCE =VCEV Tj = 100 oC 1 5 mA mA ICEV Collecto r Cu t-of f Current (VBE =-5) VCE =VCEV VCE =VCEV Tj = 100 oC 1 4 mA mA IEBO Emitter Cut-off Current (IC =0) VEB =5 V 1 mA VCEO(SUS) * Collecto r-Emitter Sustaining Voltage IC =0.2 A L = 25 mH Vclamp = 300 V 300 V hFE ∗ DC Current Gain IC =40 A VCE =5 V 16 VCE(sat) ∗ Collector-Emitter Satu ration Vo ltage IC =40 A IB =4 A IC =40 A IB =4 A Tj = 100 oC 0.6 1.2 0. 9 1. 9 V V VBE(sat) ∗ Base-Emitter Satu ration Vo ltage IC =40 A IB =4 A IC =40 A IB =4 A Tj = 100 oC 1.12 1.1 1. 3 1. 3 V V diC/dt Rateof Riseof On-state Collector VCC =3 00 V RC =0 tp =3 µs IB1 =6 A Tj = 100 oC 120 180 A/ µs VCE (3 µs) Collector-Emitter Dynamic Voltage VCC = 300 V RC =6 .2 Ω IB1 =6 A Tj =1 00 oC 36 V VCE(5 µs) Collector-Emitter Dynamic Voltage VCC = 300 V RC =6 .2 Ω IB1 =6 A Tj =1 00 oC 1.8 3 V ts tf tc Storage Time Fall Time Cross-over Time IC =40 A VCC = 250 V VBB =-5 V RBB = 0.6 Ω Vclamp = 300 V IB1 =4 A L= 0. 3 mH Tj = 100 oC 1.9 0.12 0.35 3 0. 4 0. 7 µs µs µs VCEW Maximu m Collector Emitter Voltage With ou t Snubber ICWoff =60 A IB1 =4 A VBB =-5 V VCC =5 0 V L= 42 µHRBB =0.6 Ω Tj =1 25 oC 300 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BUT32V 2/7 |
Número de pieza similar - BUT32V |
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Descripción similar - BUT32V |
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