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STF11NM80 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF11NM80 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 17 page STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Electrical characteristics 5/17 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 44 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=11 A, VGS=0 0.86 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=25 °C 612 7.22 23.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C 970 11.25 23.2 ns µC A |
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