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STP11NM80 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP11NM80 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 17 page December 2007 Rev 9 1/17 17 STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on) *Qg in the industry Application ■ Switching applications Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low on- resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Figure 1. Internal schematic diagram Type VDSS RDS(on) RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A STF11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A STP11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A STW11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A TO-247 D²PAK TO-220 TO-220FP 1 3 1 2 3 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape & reel STF11NM80 F11NM80 TO-220FP Tube STP11NM80 P11NM80 TO-220 Tube STW11NM80 W11NM80 TO-247 Tube www.st.com |
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