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STP11NM80 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STP11NM80
Descripción Electrónicos  N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11NM80 Datasheet(HTML) 1 Page - STMicroelectronics

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December 2007
Rev 9
1/17
17
STB11NM80 - STF11NM80
STP11NM80 - STW11NM80
N-channel 800 V - 0.35
Ω - 11 A - TO-220/FP- D2PAK - TO-247
MDmesh™ Power MOSFET
Features
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on) *Qg in the industry
Application
Switching applications
Description
The MDmesh™ associates the multiple drain
process with the Company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the Company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
Figure 1.
Internal schematic diagram
Type
VDSS
RDS(on)
RDS(on)*Qg
ID
STB11NM80
800 V
< 0.40 Ω
14
Ω*nC
11 A
STF11NM80
800 V
< 0.40 Ω
14
Ω*nC
11 A
STP11NM80
800 V
< 0.40 Ω
14
Ω*nC
11 A
STW11NM80 800 V
< 0.40 Ω
14
Ω*nC
11 A
TO-247
D²PAK
TO-220
TO-220FP
1
3
1
2
3
1
2
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB11NM80
B11NM80
D²PAK
Tape & reel
STF11NM80
F11NM80
TO-220FP
Tube
STP11NM80
P11NM80
TO-220
Tube
STW11NM80
W11NM80
TO-247
Tube
www.st.com


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