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BZW04-40B Datasheet(Hoja de datos) 1 Page - STMicroelectronics

No. de Pieza. BZW04-40B
Descripción  TRANSIL
Descarga  6 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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BZW04-5V8/376
BZW04-5V8B/376B
TRANSIL
TM
s
PEAK PULSE POWER : 400 W (10/1000
µs)
s
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
s
UNI AND BIDIRECTIONAL TYPES
s
LOW CLAMPING FACTOR
s
FAST RESPONSE TIME
s
UL RECOGNIZED
FEATURES
DO-15
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
400
W
P
Power dissipation on infinite heatsink
Tamb = 75°C
1.7
W
IFSM
Non repetitive surge peak forward current
for unidirectional types
tp = 10ms
Tj initial = Tamb
30
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
-65to+175
175
°C
°C
TL
Maximum lead temperature for soldering during 10s a 5mm
from case.
230
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
February 2003- Ed : 3A
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
60
°C/W
Rth (j-a)
Junction to ambient on printed circuit.
Llead =10mm
100
°C/W
THERMAL RESISTANCES
®




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