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2N7002 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

No. de pieza 2N7002
Descripción Electrónicos  Small Signal MOSFET Transistor
Download  4 Pages
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Fabricante Electrónico  BILIN [Galaxy Semi-Conductor Holdings Limited]
Página de inicio  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2N7002 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
2N7002
Document number: BL/SSMTC008
www.galaxycn.com
Rev.A
2
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V,ID=10μA
60
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250μA
1
2.1
2.5
V
Gate-body Leakage
Forward
Reverse
IGSS
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
100
-100
nA
VDS=60V, VGS=0V
1
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V,Tj=125℃
500
μA
On-state Drain Current
ID(On)
VGS=10V, VDS≥2.0VDS(ON)
500
2700
mA
Drain-Source on-voltage
VDS(ON)
VGS=10V,ID=500mA
VGS=5V,ID=50mA
0.6
0.09
3.75
1.5
V
Forward transconductance
gFS
VDS≥2.0VDS(ON),ID=200mA
80
320
mS
Static drain-Source on-resistance
RDS(ON)
VGS=10V,ID=500mA
VGS=10V,ID=500mA,Tj=100℃
VGS=5.0V,ID=50mA
VGS=5.0V,ID=50mA, Tj=100℃
1.2
1.7
1.7
2.4
7.5
13.5
7.5
13.5
Drain-Source diode forward
voltage
VSD
VGS=0V,ID=115mA
0.88
1.5
V
Input capacitance
CISS
20
50
Output capacitance
COSS
11
25
Reverse transfer capacitance
CRSS
VDS=25V,VGS=0V,f=1.0MHz
4
5
pF
Turn-On Delay Time
tD(ON)
20
ns
Turn-Off Delay Time
tD(OFF)
VDD = 30V, ID= 0.2A,
RL = 150Ω, VGS= 10V,
RGEN= 25Ω
20
ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


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