AD8042

Rev. E | Page 6 of 16

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

Supply Voltage

12.6 V

Internal Power Dissipation1

8-Lead PDIP (N)

1.3 W

8-Lead SOIC_N (R)

0.9 W

Input Voltage (Common Mode)

Differential Input Voltage

±3.4 V

Output Short-Circuit Duration

Observe Power

Derating Curves

Storage Temperature Range (N, R)

−65°C to +125°C

Lead Temperature (Soldering, 10 sec)

300°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD8042 is limited by the associated rise in junction temperature.

The maximum safe junction temperature for plastic encapsulated

devices is determined by the glass transition temperature of the

plastic, approximately 150°C. Exceeding this limit temporarily

can cause a shift in parametric performance due to a change in

the stresses exerted on the die by the package.

Exceeding a junction temperature of 175°C for an extended

period can result in device failure.

While the AD8042 is internally short-circuit protected, this

may not be sufficient to guarantee that the maximum junction

temperature (150°C) is not exceeded under all conditions. To

ensure proper operation, it is necessary to observe the

maximum power derating curves.

2.0

1.5

1.0

0.5

0

–50

90

80

70

60

50

40

30

20

10

0

–10

–20

–30

–40

AMBIENT TEMPERATURE (°C)

8-LEAD PLASTIC-DIP PACKAGE

8-LEAD SOIC PACKAGE

Figure 4. Maximum Power Dissipation vs. Temperature

ESD CAUTION