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LM4120IM5X-5.0 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM4120IM5X-5.0
Descripción Electrónicos  Precision Micropower Low Dropout Voltage Reference
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4120IM5X-5.0 Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Electrical Characteristics
LM4120-3.0V, 3.3V, 4.096V and 5.0V Unless otherwise specified V
IN =VOUT + 1V, ILOAD =0,COUT =
0.01µF, T
A =Tj = 25˚C. Limits with standard typeface are for Tj = 25˚C, and limits in boldface type apply over the −40˚C
≤ T
A
≤ +85˚C temperature range. (Continued)
Symbol
Parameter
Conditions
Min (Note 5)
Typ (Note
4)
Max (Note
5)
Units
V
N
Output Noise Voltage
(Note 8)
0.1 Hz to 10 Hz
20
µV
PP
10 Hz to 10 kHz
36
µV
PP
I
S
Supply Current
160
250
275
µA
I
SS
Power-down Supply
Current
Enable = 0.4V
−40˚C
≤ T
J
≤ +85˚C
Enable = 0.2V
1
2
µA
V
H
Logic High Input
Voltage
2.4
V
2.4
V
L
Logic Low Input
Voltage
0.4
V
0.2
I
H
Logic High Input
Current
7
15
µA
I
L
Logic Low Input
Current
0.1
µA
I
SC
Short Circuit Current
V
OUT =0
15
mA
630
V
IN = 12V, VOUT =0
17
630
Hyst
Thermal Hysteresis
(Note 7)
−40˚C
≤ T
A
≤ 125˚C
0.5
mV/V
∆V
OUT
Long Term Stability
(Note 9)
1000 hrs. @ 25˚C
100
ppm
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed
test conditions.
Note 2: Without PCB copper enhancements. The maximum power dissipation must be de-rated at elevated temperatures and is limited by TJMAX (maximum
junction temperature),
θJ-A (junction to ambient thermal resistance) and TA (ambient temperature). The maximum power dissipation at any temperature is: PDissMAX
=(TJMAX −TA)/θJ-A up to the value listed in the Absolute Maximum Ratings.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin.
Note 4: Typical numbers are at 25˚C and represent the most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National’s Averaging Outgoing Quality Level (AOQL).
Note 6: Dropout voltage is the differential voltage between VOUT and VIN at which VOUT changes ≤ 1% from VOUT at VIN = 3.3V for 1.8V, 2.0V, 2.5V and VOUT +
1V for others.For 1.8V option, dropout voltage is not guaranteed over temperature. A parasitic diode exists between input and output pins; it will conduct if VOUT is
pulled to a higher voltage than VIN.
Note 7: Thermal hysteresis is defined as the change in +25˚C output voltage before and after exposing the device to temperature extremes.
Note 8: Output noise voltage is proportional to VOUT.VN for other voltage option is calculated using (VN(1.8V)/1.8) * VOUT.VN (2.5V) = (36µVPP/1.8) * 2.5 = 46µVPP.
Note 9: Long term stability is change in VREF at 25˚C measured continuously during 1000 hrs.
www.national.com
5


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