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BAV70W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV70W Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Galaxy Electrical Production specification Dual surface mount switching diode BAV70W Document number: BL/SSSDF008 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 100μA 70 V Reverse voltage leakage current IR VR=70V 2.5 μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V f=1MHz 1.5 pF Reverse recovery time trr IF=IR=10mA IR=1mA RL=100Ω 6 nS TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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