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LET9002 Datasheet(PDF) 1 Page - STMicroelectronics

No. de Pieza. LET9002
Descripción  RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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LET9002 Datasheet(HTML) 1 Page - STMicroelectronics

   
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TARGET DATA
April, 15 2003
LET9002
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The LET9002 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The LET9002 is designed for high gain and
broadband performance operating in common
source mode at 26 V. LET9002
boasts
the
excellent gain, linearity and reliability of ST’s latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
It is ideal
for digital cellular BTS applications
requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25
°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
-0.5 to +15
V
ID
Drain Current
0.25
A
PDISS
Power Dissipation (@ Tc = 70°C)
4
W
Tj
Max. Operating Junction Temperature
150
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
20
°C/W
ORDER CODE
LET9002
BRANDING
9002
PowerFLAT
(5x5)
PIN CONNECTION
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