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STPS20120C Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS20120C Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics STPS20120C 2/9 1 Characteristics When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.012 IF 2 (RMS) Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case I2PAK / TO-220AB Per diode Total 3 1.8 ° C/W TO-220FPAB Per diode Total 5.5 4.5 Rth(c) Coupling I2PAK / TO-220AB Total 0.6 TO-220FPAB 3.5 Table 3. Static electrical characteristics (per diode) Symbol Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test : tp = 5 ms, δ < 2% Reverse leakage current Tj = 25° C VR = VRRM 10 µA Tj = 125° C 1.5 5 mA VF (2) 2. Pulse test : tp = 380 µs, δ < 2% Forward voltage drop Tj = 25° C IF = 2.5 A 0.7 V Tj = 125° C 0.54 0.58 Tj = 25° C IF = 10 A 0.92 Tj = 125° C 0.7 0.74 Tj = 25° C IF = 20 A 1.02 Tj = 125° C 0.81 0.86 |
Número de pieza similar - STPS20120C_07 |
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Descripción similar - STPS20120C_07 |
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