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2SC6041 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC6041 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC6041 2006-06-20 2 Electrical Characteristics (TC = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 1700 V, IE = 0 ― ― 1 mA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ― ― 100 µA Emitter–base breakdown voltage V (BR) EBO IE = 1 mA, IB = 0 5 ― ― V hFE (1) VCE = 5 V, IC = 2 A 30 ― 60 hFE (2) VCE = 5 V, IC = 8 A 8 ― 12 DC current gain hFE (3) VCE = 5 V, IC = 12 A 5 ― 7 ― Collector–emitter saturation voltage VCE (sat) IC = 12 A, IB = 3 A ― ― 1.5 V Base–emitter saturation voltage VBE (sat) IC = 12 A, IB = 3 A ― ― 1.25 V Transition frequency fT VCE = 10 V, IC = 0.1 A ― 2 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 260 ― pF Storage time tstg ― 4 ― Switching time Fall time tf ICP = 6 A, IB1 (end) = 0.8 A fH = 32 kHz ― 0.15 ― µs |
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