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IRF5800PBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF5800PBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF5800PBF Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.0
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-3.2
A
IDM
Pulsed Drain Current

-32
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
Linear Derating Factor
0.016
W/°C
EAS
Single Pulse Avalanche Energy
„
20.6
mJ
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
08/31/05
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
62.5
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRF5800PbF
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The
TSOP-6
package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
VDSS = -30V
RDS(on) = 0.085Ω
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
PD - 96029
TSOP-6
l Lead-Free


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